MDP1923TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDP1923TH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 69 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 42.8 nC
   trⓘ - Tiempo de subida: 10.1 nS
   Cossⓘ - Capacitancia de salida: 432 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0139 Ohm
   Paquete / Cubierta: TO-220

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MDP1923TH Datasheet (PDF)

..1. Size:1004K magnachip
mdp1923th.pdf

MDP1923 Single N-channel Trench MOSFET 100V, 69A, 13.9m General Description Features The MDP1923 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 69A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1923 is suitable device for Synchronous

..2. Size:206K inchange semiconductor
mdp1923th.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1923THFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate

8.1. Size:1072K magnachip
mdp1921th.pdf

MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1921 is suitable device for DC/DC Converter

8.2. Size:899K magnachip
mdp1922th.pdf

MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4m General Description Features The MDP1922 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1922 is suitable device for DC/DC Converter

8.3. Size:288K inchange semiconductor
mdp1921th.pdf

isc N-Channel MOSFET Transistor MDP1921THFEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.4. Size:245K inchange semiconductor
mdp1922.pdf

isc N-Channel MOSFET Transistor MDP1922FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for DC/DC converters and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

8.5. Size:206K inchange semiconductor
mdp1922th.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1922THFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

8.6. Size:206K inchange semiconductor
mdp1921.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1921FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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