MDP1930TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDP1930TH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 186.3 nC
   trⓘ - Tiempo de subida: 24.2 nS
   Cossⓘ - Capacitancia de salida: 2.123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO-220

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MDP1930TH Datasheet (PDF)

..1. Size:1085K magnachip
mdp1930th.pdf

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1930 is suitable device for Synchronous

8.1. Size:985K magnachip
mdp1932th.pdf

MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1932 is suitable device for Synchronous

8.2. Size:1058K magnachip
mdp1933th.pdf

MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 105A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1933 is suitable device for Synchronous

8.3. Size:288K inchange semiconductor
mdp1933th.pdf

isc N-Channel MOSFET Transistor MDP1933THFEATURESDrain Current : I = 105A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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