MDP1930TH Todos los transistores

 

MDP1930TH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDP1930TH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 312.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24.2 nS

Cossⓘ - Capacitancia de salida: 2.123 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO-220

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MDP1930TH datasheet

 ..1. Size:1085K  magnachip
 mdp1930th.pdf pdf_icon

MDP1930TH

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1930 is suitable device for Synchronous

 8.1. Size:985K  magnachip
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MDP1930TH

MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1932 is suitable device for Synchronous

 8.2. Size:1058K  magnachip
 mdp1933th.pdf pdf_icon

MDP1930TH

MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 105A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1933 is suitable device for Synchronous

 8.3. Size:288K  inchange semiconductor
 mdp1933th.pdf pdf_icon

MDP1930TH

isc N-Channel MOSFET Transistor MDP1933TH FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

MOSTRAR MÁS

Otros transistores... MDP15N60GTH , MDP16N50GTH , MDP1723TH , MDP18N50BTH , MDP1901TH , MDP1921TH , MDP1922TH , MDP1923TH , IRLB3034 , MDP1932TH , MDP1933TH , MDP2N60TH , MDP2N60TP , MDP4N60TH , MDP4N60TP , MDP5N50BTH , MDP5N50FTH .

History: CS12N65F | CS11N90VF | BSH103

 

 

 

 

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