MDP9N60TH Todos los transistores

 

MDP9N60TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDP9N60TH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 134 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO-220
 

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MDP9N60TH Datasheet (PDF)

 ..1. Size:729K  magnachip
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MDP9N60TH

MDP9N60 N-Channel MOSFET 600V, 9A, 0.75 General Description Features The MDP9N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I =9.0A @ V = 10V D GS RDS(ON) 0.75 @ VGS = 10V MDP9N60 is suitable device for SMPS, high Speed switching Applications an

 ..2. Size:289K  inchange semiconductor
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MDP9N60TH

isc N-Channel MOSFET Transistor MDP9N60THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.1. Size:1150K  magnachip
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MDP9N60TH

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 9.2. Size:770K  magnachip
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MDP9N60TH

MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R

Otros transistores... MDP5N50FTH , MDP5N50ZTH , MDP6N60TH , MDP7N50BTH , MDP7N60BTH , MDP7N60TH , MDP8N60TH , MDP9N50BTH , IRF740 , MDQ16N50GTH , MDQ16N50GTP , MDQ18N50GTH , MDQ18N50GTP , MDQ23N50DTP , MDS1521URH , MDS1524URH , MDS1525URH .

History: BUK7222-55A | IXTP4N45 | SVG069R5NDTR | SVF4N65D

 

 
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