MDS1528URH Todos los transistores

 

MDS1528URH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDS1528URH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.1 nS

Cossⓘ - Capacitancia de salida: 88 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0188 Ohm

Encapsulados: SOIC-8

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MDS1528URH datasheet

 ..1. Size:669K  magnachip
mds1528urh.pdf pdf_icon

MDS1528URH

MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8m General Description Features The MDS1528 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and

 8.1. Size:664K  magnachip
mds1526urh.pdf pdf_icon

MDS1528URH

MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0m General Description Features The MDS1526 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and

 8.2. Size:676K  magnachip
mds1521urh.pdf pdf_icon

MDS1528URH

MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0m General Description Features The MDS1521 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and

 8.3. Size:665K  magnachip
mds1525urh.pdf pdf_icon

MDS1528URH

MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1m General Description Features The MDS1525 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and

Otros transistores... MDQ18N50GTH , MDQ18N50GTP , MDQ23N50DTP , MDS1521URH , MDS1524URH , MDS1525URH , MDS1526URH , MDS1527URH , IRFB4110 , MDS1651URH , MDS1652ERUH , MDS1653URH , MDS1654URH , MDS1655URH , MDS1656URH , MDS1754RH , MDS1903URH .

History: AGM3416EL

 

 

 


History: AGM3416EL

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