MDS1528URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDS1528URH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   trⓘ - Tiempo de subida: 3.1 nS
   Cossⓘ - Capacitancia de salida: 88 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0188 Ohm
   Paquete / Cubierta: SOIC-8

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MDS1528URH Datasheet (PDF)

..1. Size:669K magnachip
mds1528urh.pdf

MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8mGeneral Description Features The MDS1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and

8.1. Size:664K magnachip
mds1526urh.pdf

MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0mGeneral Description Features The MDS1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and

8.2. Size:676K magnachip
mds1521urh.pdf

MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mGeneral Description Features The MDS1521 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and

8.3. Size:665K magnachip
mds1525urh.pdf

MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1mGeneral Description Features The MDS1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and

8.4. Size:661K magnachip
mds1524urh.pdf

MDS1524 Single N-channel Trench MOSFET 30V, 19.3A, 8.1mGeneral Description Features The MDS1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 19.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1524 is suitable for DC/DC converter and

8.5. Size:676K magnachip
mds1527urh.pdf

MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mGeneral Description Features The MDS1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 13.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1527 is suitable for DC/DC converter and

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