MDS1653URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDS1653URH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23.6 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SOIC-8

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MDS1653URH Datasheet (PDF)

..1. Size:745K magnachip
mds1653urh.pdf

MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mGeneral Description Features The MDS1653 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 12A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

8.1. Size:729K magnachip
mds1654urh.pdf

MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5mGeneral Description Features The MDS1654 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

8.2. Size:678K magnachip
mds1655urh.pdf

MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC

8.3. Size:641K magnachip
mds1651urh.pdf

MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17mGeneral Description Features The MDS1651 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)

8.4. Size:1043K magnachip
mds1652eruh.pdf

Preliminary Subject to change without notice ` MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. Excelle

8.5. Size:689K magnachip
mds1656urh.pdf

MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.2A @V = 10V D GSswitching performance and reliability RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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