MDS3651URH Todos los transistores

MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35m General Description Features The MDS3651 uses advanced MagnaChip s V = -30V DS MOSFET Technology to provide low on-state I = -6.0A @ V = -10V D GS resistance, high switching performance and excellent R DS(ON) reliability

MDS3653 Single P-Channel Trench MOSFET, -30V, -14.6A, 7m General Description Features The MDS3653 uses advanced MagnaChip s MOSFET VDS = -30V Technology to provide low on-state resistance. I = -14.6A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17m General Description Features The MDS3652 uses advanced MagnaChip s MOSFET V = -30V DS Technology to provide low on-state resistance, high I = -11A @V = -10V D GS switching performance and excellent reliability R DS(ON)

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m General Description Features The MDS3604 uses advanced MagnaChip s MOSFET VDS = -30V Technology to provide low on-state resistance. I = -11A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

MDS3603 Single P-Channel Trench MOSFET, -30V, -12A, 10.1m General Description Features The MDS3603 uses advanced MagnaChip s MOSFET VDS = -30V Technology to provide low on-state resistance. I = -12A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

MDS3604URH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G