MDS3652URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDS3652URH
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 26.8 nS
Conductancia de drenaje-sustrato (Cd): 350 pF
Resistencia entre drenaje y fuente RDS(on): 0.017 Ohm
Paquete / Cubierta: SOIC-8
Búsqueda de reemplazo de MOSFET MDS3652URH
MDS3652URH Datasheet (PDF)
mds3652urh.pdf
MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17m General Description Features The MDS3652 uses advanced MagnaChips MOSFET V = -30V DSTechnology to provide low on-state resistance, high I = -11A @V = -10V D GSswitching performance and excellent reliability R DS(ON)
mds3653urh.pdf
MDS3653Single P-Channel Trench MOSFET, -30V, -14.6A, 7m General Description Features The MDS3653 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -14.6A @V = -10V D GS RDS(ON) This device is suited for Power Management and load
mds3651urh.pdf
MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35m General Description Features The MDS3651 uses advanced MagnaChips V = -30V DSMOSFET Technology to provide low on-state I = -6.0A @ V = -10V D GSresistance, high switching performance and excellent R DS(ON)reliability
mds3604urh.pdf
MDS3604Single P-Channel Trench MOSFET, -30V, -11A, 12.1m General Description Features The MDS3604 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -11A @V = -10V D GS RDS(ON) This device is suited for Power Management and load
mds3603urh.pdf
MDS3603Single P-Channel Trench MOSFET, -30V, -12A, 10.1m General Description Features The MDS3603 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -12A @V = -10V D GS RDS(ON) This device is suited for Power Management and load
mds3604urh.pdf
MDS3604URHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
