MDV1529EURH Todos los transistores

 

MDV1529EURH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDV1529EURH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: PDFN33

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MDV1529EURH datasheet

 ..1. Size:1069K  magnachip
mdv1529eurh.pdf pdf_icon

MDV1529EURH

MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5m General Description Features The MDV1529E uses advanced MagnaChip s MOSFET VDS = 32V Technology, which provides high performance in on-state I = 28A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDV1529E is suitable for DC/DC converter and

 8.1. Size:854K  magnachip
mdv1526urh.pdf pdf_icon

MDV1529EURH

MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11m General Description Features The MDV1526 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1526 is suitable for DC/DC converter and

 8.2. Size:1098K  magnachip
mdv1528.pdf pdf_icon

MDV1529EURH

MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8m General Description Features The MDV1528 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDV1528 is suitable for DC/DC converter and

 8.3. Size:851K  magnachip
mdv1525urh.pdf pdf_icon

MDV1529EURH

MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1m General Description Features The MDV1525 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1525 is suitable for DC/DC converter and

Otros transistores... MDU5693VRH , MDV1522URH , MDV1523URH , MDV1524URH , MDV1525URH , MDV1526URH , MDV1527URH , MDV1528URH , RFP50N06 , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , MDV3604URH , MDV3605URH , MDV5524URH , MDZ1N60UMH .

History: ME60N03 | NTTFS4H05N

 

 

 


History: ME60N03 | NTTFS4H05N

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