MDV1542URH
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDV1542URH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 21
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7
V
trⓘ - Tiempo de subida: 11.6
nS
Cossⓘ - Capacitancia
de salida: 720
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049
Ohm
Paquete / Cubierta:
PDFN33
- Selección de transistores por parámetros
MDV1542URH
Datasheet (PDF)
..1. Size:1048K magnachip
mdv1542urh.pdf 
MDV1542 Single N-channel Trench MOSFET 30V General Description Features The MDV1542 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 32 A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1542 is suitable device for DC/DC Converter
8.1. Size:1061K magnachip
mdv1548urh.pdf 
MDV1548 Single N-channel Trench MOSFET 30V General Description Features The MDV1548 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 27.5 A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1548 is suitable device for DC/DC Converter
8.2. Size:1160K magnachip
mdv1545urh.pdf 
MDV1545 Single N-channel Trench MOSFET 30V General Description Features The MDV1545 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 32A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1545 is suitable device for DC/DC Converter
9.1. Size:1658K magnachip
mdv1595surh.pdf 
MDV1595S Single N-channel Trench MOSFET 30V, 36.1A, 10.7m General Description Features The MDV1595S uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 36.1A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1595S is suitable for DC/DC converter and
9.2. Size:854K magnachip
mdv1526urh.pdf 
MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mGeneral Description Features The MDV1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1526 is suitable for DC/DC converter and
9.3. Size:1098K magnachip
mdv1528.pdf 
MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8m General Description Features The MDV1528 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1528 is suitable for DC/DC converter and
9.4. Size:851K magnachip
mdv1525urh.pdf 
MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mGeneral Description Features The MDV1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1525 is suitable for DC/DC converter and
9.5. Size:1069K magnachip
mdv1529eurh.pdf 
MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5m General Description Features The MDV1529E uses advanced MagnaChips MOSFET VDS = 32V Technology, which provides high performance in on-state I = 28A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1529E is suitable for DC/DC converter and
9.6. Size:852K magnachip
mdv1523urh.pdf 
MDV1523 Single N-channel Trench MOSFET 30V, 24A, 6.1mGeneral Description Features The MDV1523 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1523 is suitable for DC/DC converter and
9.7. Size:850K magnachip
mdv1524urh.pdf 
MDV1524 Single N-channel Trench MOSFET 30V, 24A, 8.1mGeneral Description Features The MDV1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1524 is suitable for DC/DC converter and
9.8. Size:850K magnachip
mdv1522urh.pdf 
MDV1522 Single N-channel Trench MOSFET 30V, 28A, 4.9mGeneral Description Features The MDV1522 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1522 is suitable for DC/DC converter and
9.9. Size:856K magnachip
mdv1528urh.pdf 
MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mGeneral Description Features The MDV1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1528 is suitable for DC/DC converter and
9.10. Size:855K magnachip
mdv1527urh.pdf 
MDV1527 Single N-channel Trench MOSFET 30V, 20A, 15.9mGeneral Description Features The MDV1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1527 is suitable for DC/DC converter and
9.11. Size:918K cn vbsemi
mdv1595su.pdf 
MDV1595SUwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.010 at V = 10 V 30GS 100 % Rg and UIS Tested COMPLIANT 30 26.5 nC0.018 at V = 4.5 V 25GS APPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PC GamingD DFN 3x3 EPTop View
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