2SK4118LS Todos los transistores

 

2SK4118LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK4118LS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm
   Paquete / Cubierta: TO-220FI
 

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2SK4118LS Datasheet (PDF)

 ..1. Size:52K  sanyo
2sk4118ls.pdf pdf_icon

2SK4118LS

Ordering number : ENA0829 2SK4118LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4118LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 ..2. Size:280K  inchange semiconductor
2sk4118ls.pdf pdf_icon

2SK4118LS

isc N-Channel MOSFET Transistor 2SK4118LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.1. Size:240K  toshiba
2sk4111.pdf pdf_icon

2SK4118LS

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 8.2. Size:343K  toshiba
2sk4115.pdf pdf_icon

2SK4118LS

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS) 2SK4115 Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V

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