CEB50N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEB50N06 Datasheet (PDF)

..1. Size:370K cet
cep50n06 ceb50n06.pdf pdf_icon

CEP50N06/CEB50N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

8.1. Size:446K cet
cep50n10 ceb50n10.pdf pdf_icon

CEP50N10/CEB50N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 50A, RDS(ON) = 30m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

9.1. Size:128K cet
cep50p03 ceb50p03.pdf pdf_icon

CEP50P03/CEB50P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -47A, RDS(ON) =20m @VGS = -10V.RDS(ON) =32m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

9.2. Size:811K cn vbsemi
ceb50p03.pdf pdf_icon

CEB50P03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = - 10 V - 75 100 % Rg TestedRoHS- 30 56 nCCOMPLIANT 100 % UIS Tested0.011 at VGS = - 4.5 V - 65APPLICATIONS Load Switch Notebook Adaptor SwitchS D2PAK (TO-263)G DGSD P

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .