MSF2N40 Todos los transistores

 

MSF2N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSF2N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 24 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de MSF2N40 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MSF2N40 Datasheet (PDF)

 ..1. Size:922K  bruckewell
 msf2n40.pdf pdf_icon

MSF2N40

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=400V typically @ Tj=150C Low On

 9.1. Size:923K  bruckewell
 msf2n60.pdf pdf_icon

MSF2N40

MSF2N60 600V N-Channel MOSFET Description The MSF2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 9.2. Size:1069K  bruckewell
 msf2n70.pdf pdf_icon

MSF2N40

MSF2N70 700V N-Channel MOSFET Description The MSF2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technol

Otros transistores... MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 , IRF630 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 , MSF5N50 , MSF5N60 .

History: AP4563AGH | VP2450N3

 

 
Back to Top

 


 
.