MSF2N70 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSF2N70  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO-220F

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MSF2N70 datasheet

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MSF2N70

MSF2N70 700V N-Channel MOSFET Description The MSF2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technol

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MSF2N70

MSF2N60 600V N-Channel MOSFET Description The MSF2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

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MSF2N70

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=400V typically @ Tj=150 C Low On

Otros transistores... MSF13N50, MSF14N60, MSF15N60, MSF16N50, MSF18N50, MSF20N50, MSF2N40, MSF2N60, AO3400, MSF3N80, MSF4N60, MSF4N60L, MSF4N65, MSF5N50, MSF5N60, MSF6N40, MSF6N60