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MSF6N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSF6N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 54 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 13 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
   Paquete / Cubierta: TO-220F

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MSF6N65 Datasheet (PDF)

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msf6n65.pdf

MSF6N65
MSF6N65

MSF6N65 N-Channel Enhancement Mode Power MOSFET Description The MSF6N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 8.1. Size:848K  bruckewell
msf6n60.pdf

MSF6N65
MSF6N65

MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 9.1. Size:1096K  bruckewell
msf6n90.pdf

MSF6N65
MSF6N65

MSF6N90 900V N-Channel MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charg

 9.2. Size:813K  bruckewell
msf6n70.pdf

MSF6N65
MSF6N65

MSF6N70 700V N-Channel MOSFET Description The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 9.3. Size:881K  bruckewell
msf6n40.pdf

MSF6N65
MSF6N65

MSF6N40 N-Channel Enhancement Mode Power MOSFET Description The MSF6N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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