MSF8N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSF8N60  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.8 nS

Cossⓘ - Capacitancia de salida: 121.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO-220F

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MSF8N60 datasheet

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MSF8N60

MSF8N60 N-Channel Enhancement Mode Power MOSFET Description The MSF8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

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MSF8N60

MSF8N50 500V N-Channel MOSFET Description The MSF8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 C Low On

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MSF8N60

MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (typ 1.3 )@VGS=10V Gate Char

Otros transistores... MSF6N60, MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, MSF7N80, MSF8N50, 2N7002, MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3, MSK2N60F, MSK2N60T