MSU4N60 Todos los transistores

 

MSU4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSU4N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-251
 

 Búsqueda de reemplazo de MSU4N60 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MSU4N60 Datasheet (PDF)

 ..1. Size:381K  bruckewell
 msu4n60 s.pdf pdf_icon

MSU4N60

Preliminary MSU4N60_S 600V N-Channel MOSFET Description The MSU4N60_S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design V

 ..2. Size:694K  bruckewell
 msu4n60.pdf pdf_icon

MSU4N60

MSU4N60 600V N-Channel MOSFET Description The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme

 8.1. Size:707K  bruckewell
 msu4n65.pdf pdf_icon

MSU4N60

MSU4N65 650V N-Channel MOSFET Description The MSU4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

 9.1. Size:776K  bruckewell
 msu4n40.pdf pdf_icon

MSU4N60

MSU4N40 400V N-Channel MOSFET Description The MSU4N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

MOSTRAR MÁS

Otros transistores... MSU2N60T , MSU2N60F , MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q , MSU4N40 , NCEP15T14 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T .

 

 
Back to Top

 


 
.