MTB09P03E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB09P03E3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 66 nC
   trⓘ - Tiempo de subida: 16.4 nS
   Cossⓘ - Capacitancia de salida: 356 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET MTB09P03E3

MTB09P03E3 Datasheet (PDF)

..1. Size:340K cystek
mtb09p03e3.pdf

Spec. No. : C808E3 Issued Date : 2014.12.22 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTB09P03E3 ID @ VGS=-10V, TC=25C -75A ID @ VGS=-10V, TA=25C -11.6A 6.7m RDSON(TYP) @ VGS=-10V, ID=-25A RDSON(TYP) @ VGS=-4.5V, ID=-10A 10.2m Features Low Gate Charge Simple Drive Requirement

6.1. Size:278K cystek
mtb09p03j3.pdf

Spec. No. : C808J3 Issued Date : 2010.01.18 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTB09P03J3 ID -75A8m(typ.) RDSON@VGS=-10V, ID=-25A 11m(typ.)Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

7.1. Size:368K cystek
mtb09p04dj3.pdf

Spec. No. : C877J3 Issued Date : 2014.12.25 CYStech Electronics Corp.Revised Date : 2014.12.26 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB09P04DJ3 ID@VGS=-10V, TC=25C -50A ID@VGS=-10V, TA=25C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2m(typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9m(typ) Features Single Drive Requirement Low On-resistance

9.1. Size:589K cystek
mtb09n06j3.pdf

Spec. No. : C912J3 Issued Date : 2013.07.24 CYStech Electronics Corp. Revised Date : 2014.07.24 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m(typ) RDS(ON)@VGS=4.5V, ID=20A 9 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

9.2. Size:644K cystek
mtb095n10krl3.pdf

Spec. No. : C714L3 Issued Date : 2017.06.19 CYStech Electronics Corp. Revised Date : 2018.08.30 Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTB095N10KRL3 BVDSS 100V ID @ VGS=10V, TA=25C 3.3A Features 107m (typ.) RDSON@VGS=10V, ID=2A 127m (typ.) RDSON@VGS=4.5V, ID=2A Low Gate Charge Simple Drive Requirement ESD protected gate Pb-fr

9.3. Size:613K cystek
mtb090n06n3.pdf

Spec. No. : C420N3 CYStech Electronics Corp. Issued Date : 2014.01.24 Revised Date : 2018.07.26 Page No. : 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60V MTB090N06N3 ID @ TA=25C, VGS=10V 3.9A RDSON@VGS=10V, ID=3A 67m(typ) RDSON@VGS=4.5V, ID=2A 75m(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free

9.4. Size:343K cystek
mtb09n04h8.pdf

Spec. No. : C892H8 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40VMTB09N04H8ID 60A6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

9.5. Size:440K cystek
mtb095n10krn3.pdf

Spec. No. : C714N3 CYStech Electronics Corp. Issued Date : 2017.01.13 Revised Date : 2017.10.26 Page No. : 1/9 100V N-Channel Enhancement Mode MOSFET MTB095N10KRN3 BVDSS 100VID@ TA=25C, VGS=10V 2.3ARDSON@VGS=10V, ID=1.5A 100m(typ)Features RDSON@VGS=4.5V, ID=1A 140m(typ) Simple drive requirement Small package outline ESD protected gate Pb-free le

9.6. Size:332K cystek
mtb09n03h8.pdf

Spec. No. : C709H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03H8ID 56ARDS(ON)@VGS=10V, ID=25A 7 m(typ) RDS(ON)@VGS=4.5V, ID=20A 13 m(typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

9.7. Size:564K cystek
mtb09n06q8.pdf

Spec. No. : C912Q8 Issued Date : 2014.07.24 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m(typ) RDSON@VGS=4.5V, ID=10A 8.4m(typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha

9.8. Size:259K cystek
mtb090n06i3.pdf

Spec. No. : C420I3 Issued Date : 2014.07.11 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB090N06I3 ID@VGS=10V 5A70m VGS=10V, ID=3A RDSON(TYP) 82m VGS=4.5V, ID=2A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead

9.9. Size:327K cystek
mtb09n03v8.pdf

Spec. No. : C709V8 Issued Date : 2012.08.20 CYStech Electronics Corp.Revised Date : 2012.08.23 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03V8ID 37.5A6.8m VGS=10V, ID=12A RDSON(TYP) 13.1m VGS=4.5V, ID=8A Description The MTB09N03V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination o

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