MTB300N10L3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB300N10L3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.2 nS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.365 Ohm

Encapsulados: SOT-223

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MTB300N10L3 datasheet

 ..1. Size:359K  cystek
mtb300n10l3.pdf pdf_icon

MTB300N10L3

Spec. No. C580L3 Issued Date 2014.12.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTB300N10L3 ID@VGS=10V, TA=25 C 1.9A ID@VGS=10V, TC=25 C 5.0A RDSON@VGS=10V, ID=2.9A 290m (typ) RDSON@VGS=5V, ID=2.9A 302m (typ) Features Single Drive Requirement Fast Switching Characteristic Pb-free

 9.1. Size:262K  motorola
mtb30n06vlrev4.pdf pdf_icon

MTB300N10L3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

 9.2. Size:215K  motorola
mtb30p06v.pdf pdf_icon

MTB300N10L3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou

 9.3. Size:247K  motorola
mtb30p06vrev1x.pdf pdf_icon

MTB300N10L3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou

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