MTB50P03HDLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB50P03HDLG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 340 nS

Cossⓘ - Capacitancia de salida: 1550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: D2PAK

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MTB50P03HDLG datasheet

 ..1. Size:90K  onsemi
 mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf pdf_icon

MTB50P03HDLG

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and

 3.1. Size:182K  motorola
 mtb50p03hdlrev2.pdf pdf_icon

MTB50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

 3.2. Size:187K  motorola
 mtb50p03hdl.pdf pdf_icon

MTB50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

 4.1. Size:258K  motorola
 mtb50p03hd.pdf pdf_icon

MTB50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

MOSTRAR MÁS

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