APM8010K Todos los transistores

 

APM8010K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM8010K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
   Paquete / Cubierta: SOP-8
     - Selección de transistores por parámetros

 

APM8010K Datasheet (PDF)

 ..1. Size:542K  sino
apm8010k.pdf pdf_icon

APM8010K

APM8010K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 80V/5A,D RDS(ON) =57m(Max.) @ VGS = 10V Reliable and RuggedSSS Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of SOP-8( 5,6,7,8 )D D D DApplications LED TV Application.(4)GS S S(1, 2, 3)N-Channel MOSFETOrdering and Marking InformationAPM8010 Packa

 0.1. Size:1488K  cn vbsemi
apm8010kc.pdf pdf_icon

APM8010K

APM8010KCwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

 9.1. Size:205K  anpec
apm8001k.pdf pdf_icon

APM8010K

APM8001KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 80V/4.1A,D2D2 RDS(ON) =55m(Typ.) @ VGS = 10VS1 Reliable and RuggedG1S2 Lead Free and Green Devices AvailableG2 (RoHS Compliant)SOP-8D1 D1 D2 D2ApplicationsG1 G2 Power Management in DC/DC Converter, DC/ AC Inverter Systems.S1 S2N-Channel MOSFETOrdering and Marking Info

 9.2. Size:229K  anpec
apm8005k.pdf pdf_icon

APM8010K

APM8005KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 80V/4.7A,D2D2RDS(ON) =45m (Typ.) @ VGS = 10VRDS(ON) =55m (Typ.) @ VGS = 5VS1G1 Reliable and RuggedS2G2 Lead Free and Green Devices AvailableSOP-8 (RoHS Compliant)D1 D1 D2 D2Applications LED Application System.G1 G2S1 S2N-Channel MOSFETOrdering and Marking Informati

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SIHG22N65E | FDB6690S | RJK0629DPK | 2SK2907-01 | NCEP070N10GU | RUH1H130S | WMQ46N03T1

 

 
Back to Top

 


 
.