APM8010K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APM8010K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm

Encapsulados: SOP-8

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APM8010K datasheet

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APM8010K

APM8010K N-Channel Enhancement Mode MOSFET Features Pin Description D D D 80V/5A, D RDS(ON) =57m (Max.) @ VGS = 10V Reliable and Rugged S S S Lead Free and Green Devices Available G (RoHS Compliant) Top View of SOP-8 ( 5,6,7,8 ) D D D D Applications LED TV Application. (4) G S S S (1, 2, 3) N-Channel MOSFET Ordering and Marking Information APM8010 Packa

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APM8010K

APM8010KC www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO

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APM8010K

APM8001K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 80V/4.1A, D2 D2 RDS(ON) =55m (Typ.) @ VGS = 10V S1 Reliable and Rugged G1 S2 Lead Free and Green Devices Available G2 (RoHS Compliant) SOP-8 D1 D1 D2 D2 Applications G1 G2 Power Management in DC/DC Converter, DC/ AC Inverter Systems. S1 S2 N-Channel MOSFET Ordering and Marking Info

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APM8010K

APM8005K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 80V/4.7A, D2 D2 RDS(ON) =45m (Typ.) @ VGS = 10V RDS(ON) =55m (Typ.) @ VGS = 5V S1 G1 Reliable and Rugged S2 G2 Lead Free and Green Devices Available SOP-8 (RoHS Compliant) D1 D1 D2 D2 Applications LED Application System. G1 G2 S1 S2 N-Channel MOSFET Ordering and Marking Informati

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