APQ02SN60AF Todos los transistores

 

APQ02SN60AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ02SN60AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 23 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 8.5 nC
   Tiempo de subida (tr): 5.6 nS
   Conductancia de drenaje-sustrato (Cd): 45 pF
   Resistencia entre drenaje y fuente RDS(on): 4.4 Ohm
   Paquete / Cubierta: TO-220F

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APQ02SN60AF Datasheet (PDF)

 ..1. Size:738K  alpha pacific
apq02sn60af apq02sn60ah.pdf

APQ02SN60AF
APQ02SN60AF

DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.1. Size:545K  alpha pacific
apq02sn60a.pdf

APQ02SN60AF
APQ02SN60AF

DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 4.2. Size:701K  alpha pacific
apq02sn60ab.pdf

APQ02SN60AF
APQ02SN60AF

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.3. Size:701K  alpha pacific
apq02sn60aa.pdf

APQ02SN60AF
APQ02SN60AF

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

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