APQ02SN65AA Todos los transistores

 

APQ02SN65AA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ02SN65AA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13.9 nS

Cossⓘ - Capacitancia de salida: 32 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm

Encapsulados: TO-251

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APQ02SN65AA datasheet

 ..1. Size:398K  alpha pacific
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APQ02SN65AA

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 4.1. Size:398K  alpha pacific
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APQ02SN65AA

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 6.1. Size:545K  alpha pacific
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APQ02SN65AA

DEVICE SPECIFICATION apQ02SN60A(F) 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A RDS(on) =3.8 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 6.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN65AA

DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

MOSTRAR MÁS

Otros transistores... APM9988QG , APQ01SN60AA , APQ01SN60AB , APQ02SN60A , APQ02SN60AA , APQ02SN60AB , APQ02SN60AF , APQ02SN60AH , CS150N03A8 , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB , APQ03SN80A , APQ03SN80AF , APQ03SN80CB , APQ03SN80CF .

 

 

 

 

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