APQ04SN60CH Todos los transistores

 

APQ04SN60CH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ04SN60CH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 67 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm

Encapsulados: TO-220

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APQ04SN60CH datasheet

 ..1. Size:765K  alpha pacific
 apq04sn60cf apq04sn60ch.pdf pdf_icon

APQ04SN60CH

DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

 4.1. Size:703K  alpha pacific
 apq04sn60ca apq04sn60cb.pdf pdf_icon

APQ04SN60CH

DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

 4.2. Size:489K  alpha pacific
 apq04sn60ce.pdf pdf_icon

APQ04SN60CH

DEVICE SPECIFICATION APQ04SN60CE 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 5.1. Size:461K  alpha pacific
 apq04sn60a apq04sn60af.pdf pdf_icon

APQ04SN60CH

DEVICE SPECIFICATION apQ04SN60A(F) 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

MOSTRAR MÁS

Otros transistores... APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF , APQ04SN60CA , APQ04SN60CB , APQ04SN60CE , APQ04SN60CF , AO3407 , APQ05SN60A , APQ05SN60AF , APQ06SN60A , APQ06SN60AF , APQ06SN60AH , APQ06SN65AF , APQ06SN65AH , APQ07SN60AF .

History: FIR4N65F

 

 

 

 

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