APQ04SN60CH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APQ04SN60CH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 16 nC
Tiempo de subida (tr): 36 nS
Conductancia de drenaje-sustrato (Cd): 67 pF
Resistencia entre drenaje y fuente RDS(on): 2.3 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET APQ04SN60CH
APQ04SN60CH Datasheet (PDF)
apq04sn60cf apq04sn60ch.pdf
DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored
apq04sn60ca apq04sn60cb.pdf
DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored
apq04sn60ce.pdf
DEVICE SPECIFICATION APQ04SN60CE600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-
apq04sn60a apq04sn60af.pdf
DEVICE SPECIFICATION apQ04SN60A(F)600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
