APQ08SN50BF Todos los transistores

 

APQ08SN50BF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ08SN50BF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 44 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 41 nC
   Tiempo de subida (tr): 23 nS
   Conductancia de drenaje-sustrato (Cd): 310 pF
   Resistencia entre drenaje y fuente RDS(on): 0.85 Ohm
   Paquete / Cubierta: TO-220F

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APQ08SN50BF Datasheet (PDF)

 ..1. Size:836K  alpha pacific
apq08sn50bf apq08sn50bh.pdf

APQ08SN50BF
APQ08SN50BF

DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A effect transistors are produced using planar stripe, RDS(on) =0.72(typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

 4.1. Size:876K  alpha pacific
apq08sn50be.pdf

APQ08SN50BF
APQ08SN50BF

DEVICE SPECIFICATION APQ08SN50BE 500V/8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , effect transistors are produced using planar stripe, RDS(on) =0.72(typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

 4.2. Size:570K  alpha pacific
apq08sn50b.pdf

APQ08SN50BF
APQ08SN50BF

DEVICE SPECIFICATION apQ08SN50B(F)500V/8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , RDS(on) =0.72(typ)@ effect transistors are produced using planar stripe, VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

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