CEB05N8 Todos los transistores

 

CEB05N8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB05N8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 139 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 71 nS

Conductancia de drenaje-sustrato (Cd): 105 pF

Resistencia drenaje-fuente RDS(on): 2.9 Ohm

Empaquetado / Estuche: TO-263

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CEB05N8 Datasheet (PDF)

1.1. ceb05n8 cef05n8 cep05n8.pdf Size:344K _upd-mosfet

CEB05N8
CEB05N8

CEP05N8/CEB05N8 CEF05N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP05N8 800V 2.9 Ω 4.4A 10V CEB05N8 800V 2.9 Ω 4.4A 10V CEF05N8 800V 2.9 Ω 4.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF S

4.1. cep05n65 ceb05n65 cef05n65.pdf Size:427K _cet

CEB05N8
CEB05N8

CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP05N65 650V 2.4? 4.5A 10V CEB05N65 650V 2.4? 4.5A 10V CEF05N65 650V 2.4? 4.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-P

 5.1. cep05p03 ceb05p03.pdf Size:176K _cet

CEB05N8
CEB05N8

CEP05P03/CEB05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A,RDS(ON) = 70m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2

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