CEDM8004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEDM8004
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 8.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
Paquete / Cubierta: SOT-883L
Búsqueda de reemplazo de CEDM8004 MOSFET
CEDM8004 Datasheet (PDF)
cedm8004.pdf

CEDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004 is anSILICON MOSFETenhancement-mode P-Channel MOSFET, manufacturedby the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage.MARKING CODE: VFEATURES:SOT-883L CASE
cedm8004vl.pdf

CEDM8004VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004VL is anMOSFETP-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: VCOMPLEMENTARY N-CHA
cedm8001vl.pdf

CEDM8001VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001VL is aMOSFETP-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off
cedm8001.pdf

CEDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: FFEATURES:
Otros transistores... CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , 18N50 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 , CEM2133 , CEM4248 .
History: MTP2N40E | F501D | HPD032N02STA | BSS138E | IRFR9024NTRPBF | N0300P | CS6N60FA9H-G
History: MTP2N40E | F501D | HPD032N02STA | BSS138E | IRFR9024NTRPBF | N0300P | CS6N60FA9H-G



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