IRFS741 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS741
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 350 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 27 nS
Cossⓘ - Capacitancia de salida: 178 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRFS741 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFS741 datasheet
8.1. Size:292K international rectifier
irfs7437pbf irfsl7437pbf.pdf 
StrongIRFET IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications HEXFET Power MOSFET l Battery powered circuits VDSS 40V D l Half-bridge and full-bridge topologies l Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches G ID (Silicon Limite
8.2. Size:542K international rectifier
irfs7430-7ppbf.pdf
StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D PWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75m G max Electronic ballast applications ID (Silicon Limited) 52
8.3. Size:304K international rectifier
irfs7434pbf irfsl7434pbf.pdf
StrongIRFET IRFS7434PbF IRFSL7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications 320A ID (Silicon Limited) l Resonant mode power supplies S ID (Package Limited) 19
8.4. Size:298K international rectifier
irfs7430pbf irfsl7430pbf.pdf
StrongIRFET IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications VDSS 40V D l Brushed motor drive applications RDS(on) typ. 0.97m l BLDC motor drive applications l Battery powered circuits max. 1.2m G l Half-bridge and full-bridge topologies 426A ID (Silicon Limited) l Synchronous rectifier applications S ID (Package Limited) 195A l Resonant mode power supplies l O
8.5. Size:301K international rectifier
irfs7440pbf irfsl7440pbf.pdf
StrongIRFET IRFS7440PbF IRFSL7440PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l Battery powered circuits D VDSS 40V l Half-bridge and full-bridge topologies RDS(on) typ. 2.0m l Synchronous rectifier applications max. 2.5m l Resonant mode power supplies G ID 208A l OR-ing and redundant power switches l DC/DC an
8.6. Size:262K international rectifier
irfs7437-7ppbf.pdf
StrongIRFET IRFS7437-7PPbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D l PWM Inverterized topologies VDSS 40V l Battery powered circuits RDS(on) typ. 1.1m l Half-bridge and full-bridge topologies max. 1.4m l Electronic ballast applications G ID (Silicon Limited) 295A l Synchronous rectifier applications l Reso
8.7. Size:538K international rectifier
irfs7434-7ppbf.pdf
StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0m G max Resonant mode power supplies ID (Silicon Limited
8.9. Size:931K samsung
irfs740a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
8.10. Size:1213K blue-rocket-elect
irfs740.pdf
IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
8.11. Size:251K inchange semiconductor
irfs7434.pdf
isc N-Channel MOSFET Transistor IRFS7434 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.12. Size:205K inchange semiconductor
irfs7440pbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS7440PBF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC/AC Inverters DC/DC a
8.13. Size:252K inchange semiconductor
irfs7437.pdf
isc N-Channel MOSFET Transistor IRFS7437 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Otros transistores... IRFS723, IRFS730, IRFS730A, IRFS731, IRFS732, IRFS733, IRFS740, IRFS740A, P60NF06, IRFS742, IRFS743, IRFS750A, IRFS820, IRFS820A, IRFS821, IRFS822, IRFS823
