CEM4248 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

CEM4207P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS

CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

CEM4279Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES540V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa

CEM4228Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.3A, RDS(ON) = 30m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C

CEM4201P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -7.5A, RDS(ON) = 28m @VGS = -10V. RDS(ON) = 38m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

CEM4269Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mo

CEM4204N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 7.3A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

CEM4228www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel