HY4N60D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY4N60D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13.2 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO-252

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HY4N60D datasheet

 ..1. Size:181K  hy
 hy4n60d.pdf pdf_icon

HY4N60D

HY4N60D / HY4N60M 600V / 4.0A 600V, RDS(ON)=2.4 @VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 2 1 1 D G 2 In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mec

 8.1. Size:101K  hy
 hy4n60t.pdf pdf_icon

HY4N60D

HY4N60T / HY4N60FT 600V / 4.0A 600V, RDS(ON)=2.4 @VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

 9.1. Size:168K  hy
 hy4n65d.pdf pdf_icon

HY4N60D

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY4N65D / HY4N65M 650V / 4A 650V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 9.2. Size:145K  hy
 hy4n65t.pdf pdf_icon

HY4N60D

HY4N65T / HY4N65FT 650V / 4A 650V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

MOSTRAR MÁS

Otros transistores... HY1N60D, HY2N60D, HY2N60T, HY2N65D, HY2N65T, HY2N70D, HY2N70T, HY3N80T, AO4407A, HY4N60T, HY4N65D, HY4N65T, HY4N70D, HY4N70T, HY5N50T, HY6N60D, HY6N60T