RU120N15R Todos los transistores

 

RU120N15R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU120N15R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de RU120N15R MOSFET

   - Selección ⓘ de transistores por parámetros

 

RU120N15R Datasheet (PDF)

 ..1. Size:327K  ruichips
 ru120n15r.pdf pdf_icon

RU120N15R

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

 6.1. Size:319K  ruichips
 ru120n15q.pdf pdf_icon

RU120N15R

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

 7.1. Size:267K  semihow
 hrd120n10k hru120n10k.pdf pdf_icon

RU120N15R

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

Otros transistores... HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , RU120N15Q , IRF630 , RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R .

History: CHM9407AJGP | PTF8N65 | BRCS120N03DP | PZ5203QV | HTD2K1P10 | 2SK4212-ZK | FKP253

 

 
Back to Top

 


 
.