RU190N10S Todos los transistores

 

RU190N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU190N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 190 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

RU190N10S Datasheet (PDF)

 ..1. Size:284K  ruichips
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RU190N10S

RU190N10SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-263Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

 6.1. Size:281K  ruichips
ru190n10q.pdf pdf_icon

RU190N10S

RU190N10QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-247Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

 6.2. Size:293K  ruichips
ru190n10r.pdf pdf_icon

RU190N10S

RU190N10RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

 8.1. Size:399K  ruichips
ru190n08.pdf pdf_icon

RU190N10S

RU190N08N-Channel Advanced Power MOSFETFeatures Pin Description 80V/190ARDS (ON)=3.9m (Typ.) @ VGS=10VAvalanche RatedTO-220 TO-220F Reliable and Rugged Lead Free and Green Devices AvailableTO-263 TO-247ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Max

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
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