RU1H300Q Todos los transistores

 

RU1H300Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1H300Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 600 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 300 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 225 nS
   Cossⓘ - Capacitancia de salida: 1450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO-247
 

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RU1H300Q Datasheet (PDF)

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RU1H300Q

RU1H300QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/300A, RDS (ON) =3m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficienc

 9.1. Size:279K  ruichips
 ru1h36l.pdf pdf_icon

RU1H300Q

RU1H36LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 9.2. Size:287K  ruichips
 ru1h35q.pdf pdf_icon

RU1H300Q

RU1H35QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-247ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.3. Size:298K  ruichips
 ru1h35r.pdf pdf_icon

RU1H300Q

RU1H35RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-220ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

MOSTRAR MÁS

Otros transistores... RU1C001UN , RU1C001ZP , RU1H100R , RU1H130Q , RU1H130R , RU1H130S , RU1H190R , RU1H190S , K3569 , RU1H35K , RU1H35L , RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R , RU1H36S .

History: AS2101W | 6N60KL-TA3-T | 2SK2074 | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | SPW20N60C3

 

 
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