RU1H300Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1H300Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 600 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 300 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 225 nS

Cossⓘ - Capacitancia de salida: 1450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-247

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RU1H300Q datasheet

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 ru1h300q.pdf pdf_icon

RU1H300Q

RU1H300Q N-Channel Advanced Power MOSFET Features Pin Description 100V/300A, RDS (ON) =3m (Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications High Efficienc

 9.1. Size:279K  ruichips
 ru1h36l.pdf pdf_icon

RU1H300Q

RU1H36L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P

 9.2. Size:287K  ruichips
 ru1h35q.pdf pdf_icon

RU1H300Q

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

 9.3. Size:298K  ruichips
 ru1h35r.pdf pdf_icon

RU1H300Q

RU1H35R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-220 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

MOSTRAR MÁS

Otros transistores... RU1C001UN, RU1C001ZP, RU1H100R, RU1H130Q, RU1H130R, RU1H130S, RU1H190R, RU1H190S, IRF9540, RU1H35K, RU1H35L, RU1H35Q, RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S