RU1HE12L Todos los transistores

 

RU1HE12L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1HE12L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de RU1HE12L MOSFET

   - Selección ⓘ de transistores por parámetros

 

RU1HE12L Datasheet (PDF)

 ..1. Size:286K  ruichips
 ru1he12l.pdf pdf_icon

RU1HE12L

RU1HE12LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/12A,RDS (ON) =145m(Typ.)@VGS=10VRDS (ON) =160m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications ConvertersN-Channel MOSFETAbsolute Maximum Ra

 8.1. Size:293K  ruichips
 ru1he16l.pdf pdf_icon

RU1HE12L

RU1HE16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/16A,RDS (ON) =70m(Typ.)@VGS=10VRDS (ON) =85m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamet

 9.1. Size:279K  ruichips
 ru1he3h.pdf pdf_icon

RU1HE12L

RU1HE3HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =135m (Typ.) @ VGS=10VRDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Converters LED BacklightN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

 9.2. Size:276K  ruichips
 ru1he4d.pdf pdf_icon

RU1HE12L

RU1HE4D N-Channel Advanced Power MOSFET Features Pin Description 100V/4A, RDS (ON) =72m (Typ.) @ VGS=10V RDS (ON) =80m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications DC-DC Converter Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

MOSTRAR MÁS

Otros transistores... RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , RU1H7H , RU1H80R , RU1HC2H , IRFB3607 , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L , RU1HL13R .

History: 2SK3127B | PSMN0R9-30ULD | 2SK2687-01 | LSB55R066GT | 1N60L-TA3-T | RJK0451DPB | AONY36356

 

 
Back to Top

 


 
.