RU1HE3H Todos los transistores

 

RU1HE3H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1HE3H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOP-8
 

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RU1HE3H Datasheet (PDF)

 ..1. Size:279K  ruichips
 ru1he3h.pdf pdf_icon

RU1HE3H

RU1HE3HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =135m (Typ.) @ VGS=10VRDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Converters LED BacklightN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

 8.1. Size:253K  ruichips
 ru1he3d.pdf pdf_icon

RU1HE3H

RU1HE3DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =130m (Typ.) @ VGS=10VRDS (ON) =140m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green AvailableApplications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolPa

 9.1. Size:293K  ruichips
 ru1he16l.pdf pdf_icon

RU1HE3H

RU1HE16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/16A,RDS (ON) =70m(Typ.)@VGS=10VRDS (ON) =85m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamet

 9.2. Size:286K  ruichips
 ru1he12l.pdf pdf_icon

RU1HE3H

RU1HE12LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/12A,RDS (ON) =145m(Typ.)@VGS=10VRDS (ON) =160m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications ConvertersN-Channel MOSFETAbsolute Maximum Ra

MOSTRAR MÁS

Otros transistores... RU1H40L , RU1H60R , RU1H7H , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , 4N60 , RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , RU1HP60R .

History: IRFY430M | AP6N1R7CDT | VP3203N3 | GP2M007A065XG | SPI21N50C3 | PDC3902X | AP4501AGEM-HF

 

 
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