RU1HE3H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU1HE3H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET RU1HE3H

RU1HE3H Datasheet (PDF)

..1. Size:279K ruichips
ru1he3h.pdf

RU1HE3HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =135m (Typ.) @ VGS=10VRDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Converters LED BacklightN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

8.1. Size:253K ruichips
ru1he3d.pdf

RU1HE3DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =130m (Typ.) @ VGS=10VRDS (ON) =140m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green AvailableApplications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolPa

9.1. Size:293K ruichips
ru1he16l.pdf

RU1HE16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/16A,RDS (ON) =70m(Typ.)@VGS=10VRDS (ON) =85m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamet

9.2. Size:286K ruichips
ru1he12l.pdf

RU1HE12LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/12A,RDS (ON) =145m(Typ.)@VGS=10VRDS (ON) =160m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications ConvertersN-Channel MOSFETAbsolute Maximum Ra

9.3. Size:276K ruichips
ru1he4d.pdf

RU1HE4D N-Channel Advanced Power MOSFET Features Pin Description 100V/4A, RDS (ON) =72m (Typ.) @ VGS=10V RDS (ON) =80m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications DC-DC Converter Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

9.4. Size:277K ruichips
ru1he4h.pdf

RU1HE4HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/4A,RDS (ON) =72m (Typ.) @ VGS=10VRDS (ON) =80m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Converters.N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

Otros transistores... RU1H40L , RU1H60R , RU1H7H , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , CS150N03A8 , RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , RU1HP60R .

Liste

Recientemente añadidas las descripciónes de los transistores: