RU1HE3H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1HE3H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: SOP-8

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RU1HE3H datasheet

 ..1. Size:279K  ruichips
 ru1he3h.pdf pdf_icon

RU1HE3H

RU1HE3H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/3A, RDS (ON) =135m (Typ.) @ VGS=10V RDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Converters LED Backlight N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rat

 8.1. Size:253K  ruichips
 ru1he3d.pdf pdf_icon

RU1HE3H

RU1HE3D N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/3A, RDS (ON) =130m (Typ.) @ VGS=10V RDS (ON) =140m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Available Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

 9.1. Size:293K  ruichips
 ru1he16l.pdf pdf_icon

RU1HE3H

RU1HE16L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/16A, RDS (ON) =70m (Typ.)@VGS=10V RDS (ON) =85m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Paramet

 9.2. Size:286K  ruichips
 ru1he12l.pdf pdf_icon

RU1HE3H

RU1HE12L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/12A, RDS (ON) =145m (Typ.)@VGS=10V RDS (ON) =160m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Converters N-Channel MOSFET Absolute Maximum Ra

MOSTRAR MÁS

Otros transistores... RU1H40L, RU1H60R, RU1H7H, RU1H80R, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D, 12N60, RU1HE4D, RU1HE4H, RU1HL13K, RU1HL13L, RU1HL13R, RU1HL8L, RU1HP55R, RU1HP60R