RU20P5E Todos los transistores

 ..1. Size:327K  ruichips
 ru20p5e.pdf

RU20P5E P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =50m (Typ.)@VGS=-4.5V RDS (ON) =65m (Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S D G SOT89 D Applications Load Switch Power Management G S P-Channel MOSFET Absolute M

 9.1. Size:415K  ruichips
 ru20p7c.pdf

RU20P7C P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D D D D D D D Applications pp Load Switch

 9.2. Size:338K  ruichips
 ru20p18l.pdf

RU20P18L P-Channel Advanced Power MOSFET Features Pin Description -20V/-18A, RDS (ON) =30m (Typ.)@VGS=-4.5V D RDS (ON) =45m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS Compliant) S TO252 D Ap

 9.3. Size:361K  ruichips
 ru20p4c6.pdf

RU20P4C6 P-Channel Advanced Power MOSFET Features Pin Description -20V/-4A, S RDS (ON) =35m (Typ.)@VGS=-4.5V RDS (ON) =45m (Typ.)@VGS=-2.5V D Low On-Resistance D Super High Dense Cell Design Reliable and Rugged Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) D D SOT23-6 D D D D D D D Applications pp Load S

 9.4. Size:270K  ruichips
 ru20p4c.pdf

RU20P4C P-Channel Advanced Power MOSFET MOSFET Features Pin Description -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23-3 Lead Free and Green Available Applications Power Management Load Switch P-Channel MOSFET Absolute Maximum Ratings Symbol Param

 9.5. Size:267K  ruichips
 ru20p3b.pdf

RU20P3B P-Channel Advanced Power MOSFET MOSFET Features Pin Description -20V/-3A, RDS (ON) =80m (Typ.) @ VGS=-4.5V RDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23 Lead Free and Green Available Applications Power Management Load Switch P-Channel MOSFET Absolute Maximum Ratings Symbol Parame

 9.6. Size:420K  ruichips
 ru20p3c.pdf

RU20P3C P-Channel Advanced Power MOSFET Features Pin Description -20V/-3A, RDS (ON) =110m (Typ.)@VGS=-4.5V D RDS (ON) =150m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance E ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SO

 9.7. Size:393K  ruichips
 ru20p7c-i.pdf

RU20P7C-I P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 Applications Load Switch Power Management Battery Protection P-Cha

 9.8. Size:339K  ruichips
 ru20p2b.pdf

RU20P2B P-Channel Advanced Power MOSFET Features Pin Description -20V/-2.4A, RDS (ON) =95m (Typ.)@VGS=-4.5V D RDS (ON) =140m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) S SOT23 D Applications Load Switch G S P-Channel MOSFET Absolute Maximum Ratings S

 9.9. Size:867K  cn vbsemi
 ru20p4c.pdf

RU20P4C www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

 9.10. Size:866K  cn vbsemi
 ru20p3b.pdf