RU30106L Todos los transistores

 

RU30106L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU30106L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 107 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 130 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 530 pF
   Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
   Paquete / Cubierta: TO-252

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RU30106L Datasheet (PDF)

 ..1. Size:295K  ruichips
ru30106l.pdf

RU30106L
RU30106L

RU30106LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/130A,RDS (ON) =2.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processo

 8.1. Size:296K  ruichips
ru30100l.pdf

RU30106L
RU30106L

RU30100LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/100A,RDS (ON) =2.2 m(Typ.)@VGS=10VRDS (ON) =4 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces

 8.2. Size:281K  ruichips
ru3010h.pdf

RU30106L
RU30106L

RU3010HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/8A,RDS (ON) =18m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Other

 8.3. Size:306K  ruichips
ru30100r.pdf

RU30106L
RU30106L

RU30100RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =4 m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Max

 8.4. Size:304K  ruichips
ru30105r.pdf

RU30106L
RU30106L

RU30105RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/125A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

 8.5. Size:294K  ruichips
ru30105l.pdf

RU30106L
RU30106L

RU30105LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processor Power DC-DC Converters

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