RU30E40L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU30E40L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 52 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 0.007 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET RU30E40L
RU30E40L Datasheet (PDF)
ru30e40l.pdf
RU30E40LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/60A,RDS (ON) =5m(Typ.)@VGS=10VRDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum
ru30e4b.pdf
RU30E4BN-Channel Advanced Power MOSFETFeatures Pin Description 30V/4A, RDS (ON) =30m(Typ.)@VGS=10VD RDS (ON) =55m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected(Rating 2KV HBM) Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSN-Channel MOSFETAbsolute Maximum Rating
ru30e7h.pdf
RU30E7HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/7.8A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =25m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru30e60m2.pdf
RU30E60M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =3m(Typ.)@VGS=10VDDD RDS (ON) =6m(Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN33
ru30e30l.pdf
RU30E30LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/30A,RDS (ON) =16m(Typ.)@VGS=10VRDS (ON) =26m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications DC/DC Converter Motor DrivesN-Channel MOSFET
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEA6050KA | CTD06N017
