RU4099R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU4099R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 154 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 1400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-220

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RU4099R Datasheet (PDF)

..1. Size:333K ruichips
ru4099r.pdf

RU4099R N-Channel Advanced Power MOSFET Features Pin Description 40V/200A RDS (ON)=2.8m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

8.1. Size:326K ruichips
ru4099q.pdf

RU4099Q N-Channel Advanced Power MOSFET Features Pin Description 40V/200A RDS (ON)=2.8m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

9.1. Size:290K ruichips
ru4095l.pdf

RU4095LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/99A,RDS (ON) =3.9m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Motor Drivers DC/DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter

9.2. Size:290K ruichips
ru4090l.pdf

RU4090LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/90A,RDS (ON) =4m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Motor Drivers Switch SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

9.3. Size:1642K cn vbsemi
ru4090l.pdf

RU4090Lwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATI

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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