RU6050L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU6050L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO-252

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RU6050L Datasheet (PDF)

..1. Size:290K ruichips
ru6050l.pdf

RU6050LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

8.1. Size:293K ruichips
ru6050s.pdf

RU6050SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra

8.2. Size:302K ruichips
ru6050r.pdf

RU6050RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra

9.1. Size:372K ruichips
ru6051k.pdf

RU6051KN-Channel Advanced Power MOSFETFeatures Pin Description 60V/50A, RDS (ON) =10m(Typ.)@VGS=10V RDS (ON) =12m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DDDDDDDApplicationspp DC-DC Converters

9.2. Size:296K ruichips
ru6055s.pdf

RU6055SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC

9.3. Size:284K ruichips
ru6055l.pdf

RU6055LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications DC-DC Converters and Off-line UPS High Speed Power Switching High Frequency CircuitsN-Channel MOSFETAbsolute Maxim

9.4. Size:325K ruichips
ru6051h.pdf

RU6051HN-Channel Advanced Power MOSFETFeatures Pin Description 60V/50A,D RDS (ON) =8.5m(Typ.)@VGS=10VD RDS (ON) =9.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced TrenchTM TechnologyD Ultra Low On-ResistanceG Fast Switching SpeedS 100% Avalanche TestedS Lead Free and Green Devices (RoHS Compliant)SSOP-8D D D D(8

9.5. Size:300K ruichips
ru6055r.pdf

RU6055RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC

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