RU60E16R Todos los transistores

 ..1. Size:301K  ruichips
 ru60e16r.pdf

RU60E16R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/16A, RDS (ON) =60m (Typ.)@VGS=10V RDS (ON) =75m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parame

 7.1. Size:287K  ruichips
 ru60e16l.pdf

RU60E16L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/16A, RDS (ON) =60m (Typ.)@VGS=10V RDS (ON) =75m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management N-Channel MOSFET Absolute Maximum

 9.1. Size:257K  ruichips
 ru60e5d.pdf

RU60E5D N-Channel Advanced Power MOSFET Features Pin Description 60V/5A, RDS (ON) =58m (Type) @ VGS=10V RDS (ON) =70m (Type) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Available Applications Power Management DC-DC Converter Motor Control N-Channel

 9.2. Size:303K  ruichips
 ru60e25r.pdf

RU60E25R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/25A, RDS (ON) =35m (Typ.)@VGS=10V Super High Dense Cell Design ESD protected 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings

 9.3. Size:250K  ruichips
 ru60e6d.pdf

RU60E6D N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/6A, RDS (ON) =32m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications Power Management DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter R

 9.4. Size:284K  ruichips
 ru60e25l.pdf

RU60E25L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/25A, RDS (ON) =35m (Typ.)@VGS=10V RDS (ON) =42m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete

 9.5. Size:279K  ruichips
 ru60e5h.pdf

RU60E5H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/5A, RDS (ON) =60m (Typ.) @ VGS=10V RDS (ON) =70m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Power Management Switch Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Para

 9.6. Size:287K  ruichips
 ru60e6h.pdf

RU60E6H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/6A, RDS (ON) =31m (Type) @ VGS=10V RDS (ON) =37m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Power Management. Switch Applications. N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

 9.7. Size:804K  cn vbsemi
 ru60e25l.pdf

RU60E25L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note