RU6888S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU6888S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 88 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de RU6888S MOSFET
RU6888S Datasheet (PDF)
ru6888s.pdf
RU6888SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
ru6888m.pdf
RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni
ru6888.pdf
RU6888N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-263 TO-247 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Applicat
ru6888r.pdf
RU6888RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
Otros transistores... RU60P60R , RU6199Q , RU6199R , RU65120R , RU6581L , RU6581R , RU6881R , RU6888M , IRFB4115 , RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P .
History: WMK05N80M3 | LSB60R170GT | LSC65R650HT | WML12N65D1 | WMK14N60C4 | 2SK2713 | LSD65R180GT
History: WMK05N80M3 | LSB60R170GT | LSC65R650HT | WML12N65D1 | WMK14N60C4 | 2SK2713 | LSD65R180GT
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