RU80100R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU80100R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO-220

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RU80100R datasheet

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RU80100R

RU80100R N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications High Current Switching Applicati

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RU80100R

RU80100S N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V D Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G S TO263 D Applications High Current Switching Applications

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RU80100R

RU80190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 80V/190A, RDS (ON) =3.1m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inv

Otros transistores... RU75400Q, RU7550R, RU7550S, RU7570L, RU7580R, RU7582S, RU7590R, RU7H2K, AO4407, RU80100S, RU80190R, RU8080R, RU8080S, RU8099R, RU80N15Q, RU80N15R, RU80N15S