PHB145NQ06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHB145NQ06T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Cossⓘ - Capacitancia de salida: 785 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de PHB145NQ06T MOSFET
PHB145NQ06T Datasheet (PDF)
phb145nq06t.pdf

PHB145NQ06TN-channel TrenchMOS standard level FETRev. 01 06 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC converter
phb14nq20t php14nq20t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP14NQ20T, PHB14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching High thermal cycling performance ID = 14 A Low thermal resistancegRDS(ON) 230 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power
phb146nq06lt.pdf

PHB146NQ06LTN-channel TrenchMOS logic level FETRev. 01 10 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co
phb143nq04t php143nq04t.pdf

PHP/PHB143NQ04TN-channel TrenchMOS standard level FETRev. 01 13 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
Otros transistores... PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT , PHB143NQ04T , HY1906P , PHB146NQ06LT , PHB152NQ03LTA , PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT .
History: 2SK3162 | ELM13400CA-S | SM420R65CT2TL | 2SK1778 | STD60NH03LT4 | CS20N60W | NTD110N02RG
History: 2SK3162 | ELM13400CA-S | SM420R65CT2TL | 2SK1778 | STD60NH03LT4 | CS20N60W | NTD110N02RG



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