PHB193NQ06T Todos los transistores

 

PHB193NQ06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHB193NQ06T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 1054 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: D2PAK
 

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PHB193NQ06T Datasheet (PDF)

 ..1. Size:91K  philips
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PHB193NQ06T

PHP/PHB193NQ06TN-channel TrenchMOS standard level FETRev. 01 06 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

 9.1. Size:91K  philips
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PHB193NQ06T

PHP/PHB191NQ06LTN-channel TrenchMOS logic level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

 9.2. Size:323K  nxp
phb191nq06lt.pdf pdf_icon

PHB193NQ06T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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