PHP108NQ03LT Todos los transistores

 

PHP108NQ03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP108NQ03LT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 102 nS

Conductancia de drenaje-sustrato (Cd): 580 pF

Resistencia drenaje-fuente RDS(on): 0.0075 Ohm

Empaquetado / Estuche: TO-220AB

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PHP108NQ03LT Datasheet (PDF)

1.1. phb108nq03lt phd108nq03lt php108nq03lt.pdf Size:253K _philips2

PHP108NQ03LT
PHP108NQ03LT

PHP/PHB/PHD108NQ03LT TrenchMOS™ logic level FET Rev. 02 — 11 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatibl

5.1. php10n10e 1.pdf Size:56K _philips2

PHP108NQ03LT
PHP108NQ03LT

Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. The device is VDS Drain-source voltage 100 V intended for use in Switched Mode ID Drain current (DC) 11 A Power Supplies (SMPS), motor Ptot Total power dissipation 60 W

5.2. php1035 1.pdf Size:51K _philips2

PHP108NQ03LT
PHP108NQ03LT

DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification 1998 Feb 18 File under Discrete Semiconductors, SC13b Philips Semiconductors Preliminary specification P-channel enhancement mode PHP1035 MOS transistor FEATURES PINNING - SOT96-1 (SO8) Very low RDSon PIN SYMBOL DESCRIPTION High-speed switching 1 s source No seconda

 5.3. php1025 1.pdf Size:51K _philips2

PHP108NQ03LT
PHP108NQ03LT

DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification 1998 Feb 18 File under Discrete Semiconductors, SC13b Philips Semiconductors Objective specification P-channel enhancement mode PHP1025 MOS transistor FEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low threshold PIN SYMBOL DESCRIPTION High-speed switching 1 s source

5.4. php101nq03lt phu101nq03lt.pdf Size:89K _philips2

PHP108NQ03LT
PHP108NQ03LT

PHP/PHU101NQ03LT TrenchMOS™ logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK). 2. Features Low gate charge Low on-state resistance. 3. Applications Optimized as a con

 5.5. php10n40 1.pdf Size:53K _philips2

PHP108NQ03LT
PHP108NQ03LT

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 10.7 A blocking voltage, fast switching and Ptot Total power dissi

5.6. php101nq04t.pdf Size:174K _philips2

PHP108NQ03LT
PHP108NQ03LT

PHP101NQ04T N-channel TrenchMOS standard level FET Rev. 02 — 5 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

5.7. php101nq04t phb101nq04t.pdf Size:94K _philips2

PHP108NQ03LT
PHP108NQ03LT

PHP/PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 01 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC con

5.8. php10n60e.pdf Size:18K _philips2

PHP108NQ03LT
PHP108NQ03LT

Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 9.6 A g • Low thermal resistance RDS(ON) ≤ 0.75 Ω s GENERAL DESCRIPTION PINNING SOT78 (TO22

5.9. php109 2.pdf Size:81K _philips2

PHP108NQ03LT
PHP108NQ03LT

DISCRETE SEMICONDUCTORS DATA SHEET PHP109 P-channel enhancement mode MOS transistor 1997 Jun 18 Product specification Supersedes data of 1996 Jun 11 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode PHP109 MOS transistor FEATURES PINNING - SO8 (SOT96-1) High-speed switching PIN SYMBOL DESCRIPTION No secondary brea

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