PHP110NQ08T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP110NQ08T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 230 W
Tensión drenaje-fuente (Vds): 75 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 75 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 107 nS
Conductancia de drenaje-sustrato (Cd): 840 pF
Resistencia drenaje-fuente RDS(on): 0.009 Ohm
Empaquetado / Estuche: TO-220AB
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PHP110NQ08T Datasheet (PDF)
1.1. php110nq08t phb110nq08t.pdf 
Size:89K _philips2
PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC c
1.2. php110nq06lt.pdf Size:211K _philips2
PHP110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features
1.3. phb110nq08lt php110nq08lt.pdf Size:89K _philips2
PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Rev. 01 — 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies
1.4. php110nq06lt phb110nq06lt.pdf Size:94K _philips2
PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC convert
1.5. php110nq08t.pdf Size:315K _philips2
PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F
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