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PHP110NQ08T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP110NQ08T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 230 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 107 nS

Conductancia de drenaje-sustrato (Cd): 840 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO-220AB

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PHP110NQ08T Datasheet (PDF)

1.1. php110nq08t phb110nq08t.pdf Size:89K _philips2

PHP110NQ08T
PHP110NQ08T

PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC c

1.2. php110nq06lt.pdf Size:211K _philips2

PHP110NQ08T
PHP110NQ08T

PHP110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features

 1.3. phb110nq08lt php110nq08lt.pdf Size:89K _philips2

PHP110NQ08T
PHP110NQ08T

PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Rev. 01 — 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

1.4. php110nq06lt phb110nq06lt.pdf Size:94K _philips2

PHP110NQ08T
PHP110NQ08T

PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC convert

 1.5. php110nq08t.pdf Size:315K _philips2

PHP110NQ08T
PHP110NQ08T

PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

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