PHP119NQ06T Todos los transistores

 

PHP119NQ06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP119NQ06T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 52 nS

Conductancia de drenaje-sustrato (Cd): 554 pF

Resistencia drenaje-fuente RDS(on): 0.0071 Ohm

Empaquetado / Estuche: TO-220AB

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PHP119NQ06T Datasheet (PDF)

1.1. phb119nq06t php119nq06t.pdf Size:92K _philips2

PHP119NQ06T
PHP119NQ06T

PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

1.2. php119nq06t phb119nq06t.pdf Size:94K _philips2

PHP119NQ06T
PHP119NQ06T

PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC converter

 5.1. php11n50e phb11n50e phw11n50e.pdf Size:35K _philips2

PHP119NQ06T
PHP119NQ06T

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 10.4 A g • Low thermal resistance RDS(ON) ≤ 0.6 Ω s GENERAL DESCRIPTI

5.2. phb11n06lt phd11n06lt php11n06lt 3.pdf Size:114K _philips2

PHP119NQ06T
PHP119NQ06T

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) ? 150 m? (VGS = 5 V) g RDS(ON) ? 130 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancemen

 5.3. php110nq08t phb110nq08t.pdf Size:89K _philips2

PHP119NQ06T
PHP119NQ06T

PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC c

5.4. php110nq06lt.pdf Size:211K _philips2

PHP119NQ06T
PHP119NQ06T

PHP110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features

 5.5. phb110nq08lt php110nq08lt.pdf Size:89K _philips2

PHP119NQ06T
PHP119NQ06T

PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Rev. 01 — 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

5.6. php110nq06lt phb110nq06lt.pdf Size:94K _philips2

PHP119NQ06T
PHP119NQ06T

PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC convert

5.7. phb112n06t php112n06t.pdf Size:262K _philips2

PHP119NQ06T
PHP119NQ06T

PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features Fast switching Very low on-state resistan

5.8. php110nq08t.pdf Size:315K _philips2

PHP119NQ06T
PHP119NQ06T

PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

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