PHP129NQ04LT Datasheet. Equivalente

 ..1. Size:96K  philips
 php129nq04lt phb129nq04lt.pdf

PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

 ..2. Size:94K  philips
 phb129nq04lt php129nq04lt.pdf

PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

 9.1. Size:58K  philips
 php125n06lt 4.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V) g Low thermal resistance

 9.2. Size:114K  philips
 phb12nq15t phd12nq15t php12nq15t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 A g RDS(ON) 200 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in

 9.3. Size:51K  philips
 php125n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state

 9.4. Size:57K  philips
 php12n10e 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. The device is VDS Drain-source voltage 100 V intended for use in Switched Mode ID Drain current (DC) 14 A Power Supplies (SMPS), motor Ptot Total power dissipation 7

 9.5. Size:85K  philips
 php125 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PHP125 P-channel enhancement mode MOS transistor 1997 Jun 18 Product specification Supersedes data of 1996 Apr 02 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode PHP125 MOS transistor FEATURES DESCRIPTION High-speed switching P-channel enhancement mode MOS transistor in an 8-p