PHP129NQ04LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP129NQ04LT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 15 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 145 nS

Conductancia de drenaje-sustrato (Cd): 635 pF

Resistencia drenaje-fuente RDS(on): 0.005 Ohm

Empaquetado / Estuche: TO-220AB

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PHP129NQ04LT Datasheet (PDF)

1.1. php129nq04lt phb129nq04lt.pdf Size:96K _philips2

PHP/PHB129NQ04LT N-channel TrenchMOS� logic level FET Rev. 01 � 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS� technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co

1.2. phb129nq04lt php129nq04lt.pdf Size:94K _philips2

PHP/PHB129NQ04LT N-channel TrenchMOS™ logic level FET Rev. 01 — 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

5.1. php125 3.pdf Size:85K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PHP125 P-channel enhancement mode MOS transistor 1997 Jun 18 Product specification Supersedes data of 1996 Apr 02 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode PHP125 MOS transistor FEATURES DESCRIPTION � High-speed switching P-channel enhancement mode MOS transistor in an 8-pin p

5.2. php12n10e 1.pdf Size:57K _philips2

Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. The device is VDS Drain-source voltage 100 V intended for use in Switched Mode ID Drain current (DC) 14 A Power Supplies (SMPS), motor Ptot Total power dissipation 75 W

5.3. php125n06t 1.pdf Size:51K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHP125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V �trench� technology. The device ID Drain current (DC)1 75 A features very low on-state resistan

5.4. php125n06lt 4.pdf Size:58K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHP125N06LT, PHB125N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA � �Trench� technology VDSS = 55 V d � Very low on-state resistance � Fast switching ID = 75 A � Stable off-state characteristics � High thermal cycling performance RDS(ON) ? 8 m? (VGS = 5 V) g � Low thermal resistance RDS(ON) ? 7 m? (VGS = 1

5.5. phb12nq15t phd12nq15t php12nq15t 1.pdf Size:114K _philips2

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T FEATURES SYMBOL QUICK REFERENCE DATA � �Trench� technology d � Low on-state resistance VDSS = 150 V � Fast switching � Low thermal resistance ID = 12.5 A g RDS(ON) ? 200 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope u

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