PHP174NQ04LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP174NQ04LT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 15 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 118 nS

Conductancia de drenaje-sustrato (Cd): 945 pF

Resistencia drenaje-fuente RDS(on): 0.004 Ohm

Empaquetado / Estuche: TO-220AB

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PHP174NQ04LT Datasheet (PDF)

1.1. phb174nq04lt php174nq04lt.pdf Size:94K _philips2

PHP/PHB174NQ04LT N-channel TrenchMOS™ logic level FET Rev. 01 — 12 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

1.2. php174nq04lt phb174nq04lt.pdf Size:95K _philips2

PHP/PHB174NQ04LT N-channel TrenchMOS� logic level FET Rev. 01 � 12 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS� technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co

5.1. php176nq04t.pdf Size:181K _philips2

PHP176NQ04T N-channel TrenchMOS standard level FET Rev. 02 — 6 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

5.2. php176nq04t phb176nq04t.pdf Size:88K _philips2

PHP/PHB176NQ04T N-channel TrenchMOS™ standard level FET Rev. 01 — 10 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

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