PHP176NQ04T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP176NQ04T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 1050 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Paquete / Cubierta: TO-220AB
- Selección de transistores por parámetros
PHP176NQ04T Datasheet (PDF)
php176nq04t phb176nq04t.pdf

PHP/PHB176NQ04TN-channel TrenchMOS standard level FETRev. 01 10 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
php176nq04t.pdf

PHP176NQ04TN-channel TrenchMOS standard level FETRev. 02 6 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
php174nq04lt phb174nq04lt.pdf

PHP/PHB174NQ04LTN-channel TrenchMOS logic level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
phb174nq04lt php174nq04lt.pdf

PHP/PHB174NQ04LTN-channel TrenchMOS logic level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IMW65R027M1H | CSD16410Q5A
History: IMW65R027M1H | CSD16410Q5A



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